¥ 1.99
10-49个起订
¥ 1.39
50-199个
¥ 1.29
≥200个
20000个可售
品牌 型号 ..
| 高度 | 6.22mm |
| 晶体管材料 | Si |
| 类别 | 功率 MOSFET |
| 长度 | 6.73mm |
| 典型输入电容值@Vds | 350 pF@ 25 V |
| 通道模式 | 增强 |
| 安装类型 | 通孔 |
| 每片芯片元件数目 | 1 |
| 漏源电阻值 | 175 mΩ |
| 通道类型 | P |
| Board Level Components | Y |
| 高工作温度 | +150 °C |
| 栅阈值电压 | 4V |
| 低工作温度 | -55 °C |
| 功率耗散 | 38 W |
| 栅源电压 | ±20 V |
| 宽度 | 2.39mm |
| 尺寸 | 6.73 x 2.39 x 6.22mm |
| 小栅阈值电压 | 2V |
| 漏源电压 | 55 V |
| 典型接通延迟时间 | 13 ns |
| 典型关断延迟时间 | 23 ns |
| 封装类型 | IPAK |
| 连续漏极电流 | 11 A |
| 引脚数目 | 3 |
| 晶体管配置 | 单 |
| 典型栅极电荷@Vgs | 19 nC @ 10 V |
| Factory Pack Quantity | 1500 |
| Vgs - Gate-Source Voltage | 20 V |
| Vds - Drain-Source Breakdown Voltage | - 55 V |
| Transistor Type | 1 P-Channel |
| Rds On - Drain-Source Resistance | 175 mOhms |
| Transistor Polarity | P-Channel |
| Brand | Infineon Technologies |
| Id - Continuous Drain Current | - 11 A |
| Mounting Style | Through Hole |
| Height | 6.22 mm |
| Packaging | Tube |
| Width | 2.38 mm |
| Length | 6.73 mm |
| Number of Channels | 1 Channel |
| Qg - Gate Charge | 12.7 nC |
| Pd - Power Dissipation | 38 W |
| Package / Case | TO-251-3 |
| Technology | Si |
| RoHS | RoHS Compliant |
